10 March 2015 Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm
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Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820X (2015) https://doi.org/10.1117/12.2076631
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Cascade pumping schemes that utilize single-QW gain stages enhanced both the power conversion efficiency and the output power level of GaSb-based diode lasers that emit near and above 3 μm at room temperature. The cascade lasers discussed in this work had densely stacked type-I QWs gain stages characterized by high differential gain. The 3 μm emitting devices demonstrated CW threshold current densities near 100 A/cm2, a twofold improvement over the previous world record, that resulted in peak power conversion efficiencies increasing to 16% at 17°C. Comparable narrow ridge two-stage devices generated more than 100 mW of CW power with ~10% power conversion efficiencies. Three-stage multimode cascade lasers emitted 960 mW of CW output power near 3 μm and 120 mW CW near 3.3 μm.
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L. Shterengas, R. Liang, T. Hosoda, G. Kipshidze, G. Belenky, S. S. Bowman, R. L. Tober, "Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820X (10 March 2015); doi: 10.1117/12.2076631; https://doi.org/10.1117/12.2076631
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