10 March 2015 Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm
Author Affiliations +
Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820X (2015) https://doi.org/10.1117/12.2076631
Event: SPIE OPTO, 2015, San Francisco, California, United States
Cascade pumping schemes that utilize single-QW gain stages enhanced both the power conversion efficiency and the output power level of GaSb-based diode lasers that emit near and above 3 μm at room temperature. The cascade lasers discussed in this work had densely stacked type-I QWs gain stages characterized by high differential gain. The 3 μm emitting devices demonstrated CW threshold current densities near 100 A/cm2, a twofold improvement over the previous world record, that resulted in peak power conversion efficiencies increasing to 16% at 17°C. Comparable narrow ridge two-stage devices generated more than 100 mW of CW power with ~10% power conversion efficiencies. Three-stage multimode cascade lasers emitted 960 mW of CW output power near 3 μm and 120 mW CW near 3.3 μm.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Shterengas, L. Shterengas, R. Liang, R. Liang, T. Hosoda, T. Hosoda, G. Kipshidze, G. Kipshidze, G. Belenky, G. Belenky, S. S. Bowman, S. S. Bowman, R. L. Tober, R. L. Tober, } "Type-I QW cascade diode lasers with 830 mW of CW power at 3 μm", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820X (10 March 2015); doi: 10.1117/12.2076631; https://doi.org/10.1117/12.2076631


Back to Top