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10 March 2015 Recent advances in the research toward graphene-based terahertz lasers
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Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 938219 (2015) https://doi.org/10.1117/12.2079411
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
This paper reviews recent advances in the research and development toward the graphene-based terahertz (THz) lasers. Mass-less Dirac Fermions of electrons and holes in gapless and linear symmetric band structures in graphene enable a gain in a wide THz frequency range under optical or electrical pumping. The excitation of the surface plasmon polaritons in the population-inverted graphene dramatically enhances the THz gain. Photon-emission-assisted resonant tunneling in a double-graphene-layered nano-capacitor structure also strongly enhances the THz gain. Novel graphene-based heterostructures using these physical mechanisms for the current-injection driven THz lasing are discussed. Their superior gain-spectral properties are analyzed and the laser cavity structures for the graphene THz laser implementation are discussed.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taiichi Otsuji, Akira Satou, Takayuki Watanabe, Stephane A. Boubanga-Tombet, Maxim Ryzhii, Alexander A. Dubinov, Vyacheslav V. Popov, Vladimir Mitin, Michael Shur, and Victor Ryzhii "Recent advances in the research toward graphene-based terahertz lasers", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 938219 (10 March 2015); https://doi.org/10.1117/12.2079411
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