The monolithic devices reach output powers up to 215 mW with emission widths of about 20 pm. At 200 mW the conversion efficiency is 20%, i.e. the electrical power consumption is only 1 W. The spectral distance between the two laser cavities is about 0.6 nm, i.e. 10 cm-1 as targeted. The side mode suppression ratio is better than 50 dB. Amplifying these devices using a ridge waveguide amplifier an output power of about 750 mW could be achieved maintaining the spectral properties of the master oscillator.
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Bernd Sumpf, Martin Maiwald, Andreas Klehr, André Müller, Frank Bugge, Jörg Fricke, Peter Ressel, Götz Erbert, Günther Tränkle, "785-nm dual wavelength DBR diode lasers and MOPA systems with output powers up to 750 mW," Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821B (10 March 2015);