Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

Martin Hempel; Jens W. Tomm; Fangyu Yue; Mauro A. Bettiati; Thomas Elsaesser

doi:10.1117/12.2075859

10 March 2015 Short-wavelength infrared defect emission as probe for degradation effects in diode lasers

Martin Hempel, Jens W. Tomm, Fangyu Yue, Mauro A. Bettiati, Thomas Elsaesser

Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93821G (2015) https://doi.org/10.1117/12.2075859
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

The infrared emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 7.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm is found to originate from defect states located within the waveguide of the devices. The SWIR intensity is verified to represent a measure of the non-equilibrium carrier concentration in the waveguide, allowing for non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for in situ analysis of the damage patterns. Moreover, spatial resolved SWIR measurements are a promising tool for device inspecting even in low-power operation regimes.

Citation Download Citation

Martin Hempel, Jens W. Tomm, Fangyu Yue, Mauro A. Bettiati, and Thomas Elsaesser "Short-wavelength infrared defect emission as probe for degradation effects in diode lasers", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821G (10 March 2015); https://doi.org/10.1117/12.2075859

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