10 March 2015 Improved efficiency in room temperature >3µm diodes using highly-strained quantum wells
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Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93821Q (2015) https://doi.org/10.1117/12.2076391
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We present experimental comparison of Type-I diode lasers emitting <3 μm wavelength in room temperature with increased strain in quantum wells (QWs). Due to diminishing hole confinement in the barrier, the performance of mid- IR Type-I diode laser is generally poor. Here we improve the hole confinement using quinary alloy in the barrier in conjunction with highly strained QWs. By using molecular beam epitaxial growth method, we achieve up to 2.3% strain in the QWs. At near room temperature, highly strained laser structure shows approximately 4 times improved laser performance than regular strained laser under the same testing condition. The study demonstrates significant improvement in laser efficiency using highly strained QWs in the GaSb-based type-I mid-infrared laser diodes.
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Chunte Lu, Chunte Lu, Ron Kaspi, Ron Kaspi, Tim Newell, Tim Newell, Chi Yang, Chi Yang, Sanh Luong, Sanh Luong, Don Gianardi, Don Gianardi, } "Improved efficiency in room temperature >3µm diodes using highly-strained quantum wells", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821Q (10 March 2015); doi: 10.1117/12.2076391; https://doi.org/10.1117/12.2076391
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