9 March 2015 High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes
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Abstract
We report on the achievement of relatively high power phosphor-free white light-emitting diodes (LEDs) using a new self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire heterostructure. Multiple AlGaN shell layers are spontaneously formed during the growth of the quantum dot active region. Due to the drastically reduced nonradiative surface recombination, such core-shell nanowire structures exhibit significantly increased carrier lifetime (from ~ 0.3ns to ~ 4.5ns) and massively enhanced photoluminescence intensity. Strong white-light emission was recorded for the unpackaged core-shell nanowire LEDs with an output power of >5 mW, measured under an injection current ~ 60A/cm2, with a color rendering index of ~ 95.
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Hieu P. T. Nguyen, Hieu P. T. Nguyen, Mehrdad Djavid, Mehrdad Djavid, Steffi Y. Woo, Steffi Y. Woo, Xianhe Liu, Xianhe Liu, Qi Wang, Qi Wang, Gianluigi A. Botton, Gianluigi A. Botton, Zetian Mi, Zetian Mi, } "High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 938307 (9 March 2015); doi: 10.1117/12.2084777; https://doi.org/10.1117/12.2084777
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