Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Ming-Chun Tseng; Chi-Lu Chen; Nan-Kai Lai; Dong-Sing Wuu; Hsin-Ying Lee; Yu-Chang Lin; Ray-Hua Horng

doi:10.1117/12.2079507

9 March 2015 Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD

Ming-Chun Tseng, Chi-Lu Chen, Nan-Kai Lai, Dong-Sing Wuu, Hsin-Ying Lee, Yu-Chang Lin, Ray-Hua Horng

Author Affiliations +

Proceedings Volume 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX; 93830D (2015) https://doi.org/10.1117/12.2079507
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

A twice wafer-transfer technique can be used to fabricate high-brightness p-side-up thin-film AlGaInP-based light-emitting diodes (LEDs) with an aluminum-doped zinc oxide (AZO) thin films transparent conductive layer deposited on a GaP window layer. The GaP window layer consist of the two different doping profile, the carbon doped Gap (GaP:C) window layer of 50 nm is on the top of Mg doped GaP window layer of 8 μm. The GaP:C window layer is used to improved the ohmic contact properties of GaP:C/AZO. The AZO with different cycle ratio of Zn:Al (15:1, 20:1 and 25:1) is deposited on GaP:C window layer as current spreading layer by atomic layer deposition. The AZO layer can be used to improve light extraction, which enhances light output power. The output power of p-side-up thin-film AlGaInP LED with an AZO layer of 20:1 cycle ratio has improved up to 19.2 % at injection current of 350 mA, as compared with that of LED without AZO film. The p-side-up thin-film AlGaInP LED with AZO current spreading layer exhibited excellent performance stability, the emission wavelength shift of p-side-up thin-film AlGaInP LED without and with AZO thin film(Zn:Al=20:1) are 17 nm and 3 nm under the injection current increased from 20 mA to 1000mA, respectively. This stability can be attributed to the following factors: 1) Refractive index matching, performed by introducing AZO thin film between the epoxy and the GaP window layer enhances light extraction; and 2) the favorable thermal dissipation of the silicon substrate reduces thermal degradation.

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Ming-Chun Tseng, Chi-Lu Chen, Nan-Kai Lai, Dong-Sing Wuu, Hsin-Ying Lee, Yu-Chang Lin, and Ray-Hua Horng "Study of Aluminum-doped zinc oxide current spreading layer on P-side up thin-film AlGaInP-based light-emitting diodes by ALD", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 93830D (9 March 2015); https://doi.org/10.1117/12.2079507

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