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7 February 2015 High performance broadband photodetector and its array for optical communication
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Device-level reduction of dark current is critical for improving the Signal to Noise ratio and dynamic range of system using III-V based optical components. We report on low-noise, back-illuminated p-i-n photodetector and its arrays with high spectral response for optical communication and also optical interconnects applications at 1.3 μm and 1.55 μm wavelengths. The photodetector is based on planar structure fabricated from InP having a latticematched InGaAs-absorber layer, and it is designed specifically for high sensitivity and low dark current (nA) at room temperature by minimizing leakage current. Electrical and optical performance of both individual diodes and small-pixel array test structures will be presented in this paper.
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Jeremy Bregman, Richie Nagi, Robert Olah, Patrick Oduor, and Achyut K. Dutta "High performance broadband photodetector and its array for optical communication", Proc. SPIE 9388, Optical Metro Networks and Short-Haul Systems VII, 93880Q (7 February 2015);

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