13 March 2015 High-speed binary CMOS image sensor using a high-responsivity MOSFET-type photodetector
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Abstract
In this paper, a complementary metal oxide semiconductor (CMOS) binary image sensor based on a gate/body-tied (GBT) MOSFET-type photodetector is proposed. The proposed CMOS binary image sensor was simulated and measured using a standard CMOS 0.18-μm process. The GBT MOSFET-type photodetector is composed of a floating gate (n+- polysilicon) tied to the body (n-well) of the p-type MOSFET. The size of the active pixel sensor (APS) using GBT photodetector is smaller than that of APS using the photodiode. This means that the resolution of the image can be increased. The high-gain GBT photodetector has a higher photosensitivity compared to the p-n junction photodiode that is used in a conventional APS. Because GBT has a high sensitivity, fast operation of the binary processing is possible. A CMOS image sensor with the binary processing can be designed with simple circuits composed of a comparator and a Dflip- flop while a complex analog to digital converter (ADC) is not required. In addition, the binary image sensor has low power consumption and high speed operation with the ability to switch back and forth between a binary mode and an analog mode.
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Byoung-Soo Choi, Byoung-Soo Choi, Sung-Hyun Jo, Sung-Hyun Jo, Myunghan Bae, Myunghan Bae, Pyung Choi, Pyung Choi, Jang-Kyoo Shin, Jang-Kyoo Shin, "High-speed binary CMOS image sensor using a high-responsivity MOSFET-type photodetector", Proc. SPIE 9403, Image Sensors and Imaging Systems 2015, 94030O (13 March 2015); doi: 10.1117/12.2087378; https://doi.org/10.1117/12.2087378
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