22 August 1988 Electron-Hole Interaction In GaAs
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947189
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The role of electron-hole interaction in the ultrafast relaxation of hot photoexcited carriers in GaAs and how it depends on the carrier density and energy of the laser pulse is discussed. The intervalley transfer of carriers photoexcited by a 2.04 laser pulse and their response to 500V/cm field is examined for two excitation levels of 5x1016 cm-3 and 1018 cm-3. It is found that the transfer rates are not affected by e-h or electron-electron interaction at low excitation levels. At high excitation levels the e-h interaction accelerates the return rates to the central valley and provides an important energy loss channel for the electrons. In response to a 500V/cm field, the electrons exhibit very small velocities during the first two picoseconds. At times beyond 4 ps, the velocities are smaller for higher electron densities.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Osman, M. A. Osman, H. L. Grubin, H. L. Grubin, } "Electron-Hole Interaction In GaAs", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947189; https://doi.org/10.1117/12.947189
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