22 August 1988 Resonantly-Enhanced And Alloy-Assisted Photoluminescence, Band-Gap Narrowing And Stimulated Emission In A1x Ga1_x As
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947216
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Time-resolved photoluminescence is used to study the influence of enhanced intervalley scattering and band mixing on the dynamics of dense electron-hole plasmas created by intense picosecond excitation of Alx Ga1_x As samples with Al concentrations near the direct-to-indirect band gap crossover value. Long-wave-vector scattering in these materials is enhanced by the near-degeneracy of the direct and indirect conduction-band valleys and by the alloy disorder. The relaxation of strict translational symmetry caused by this strong scattering allows the observation of indirect spontaneous emission that is comparable in strength to the direct emission, of zero-phonon indirect transitions, and of stimulated emission from the indirect band gap. Moreover, the strong mixing of the states in the direct and indirect conduction band valleys arising from this scattering causes enhanced band-gap renormalization in nominally direct-gap materials.
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H. Kalt, Arthur L. Smirl, K. Bohnert, Thomas F. Boggess, "Resonantly-Enhanced And Alloy-Assisted Photoluminescence, Band-Gap Narrowing And Stimulated Emission In A1x Ga1_x As", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947216; https://doi.org/10.1117/12.947216
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