Time-Resolved Studies Of Phase Transitions At Semiconductor Surfaces

H. W.K. Tom; G. D. Aumiller; C. H. Brito-Cruz

doi:10.1117/12.947209

22 August 1988 Time-Resolved Studies Of Phase Transitions At Semiconductor Surfaces

H. W.K. Tom, G. D. Aumiller, C. H. Brito-Cruz

Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947209
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

ÅOptical second-harmonic studies show that the electronic structure in the top 75 - 130 A of a crystalline Si surface loses cubic order only 150 fsec after the Si is excited by an intense 100 fsec optical pulse. This suggests that atomic disorder can be induced directly by electronic excitation, before the material becomes vibrationally excited. In contrast, the electronic properties of the equilibrium molten phase are not obtained for several hundreds of fsec.

Citation Download Citation

H. W.K. Tom, G. D. Aumiller, and C. H. Brito-Cruz "Time-Resolved Studies Of Phase Transitions At Semiconductor Surfaces", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); https://doi.org/10.1117/12.947209

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