22 August 1988 Transient And Stationary Properties Of Velocity Fluctuations In Quantum Wells
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Proceedings Volume 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II; (1988) https://doi.org/10.1117/12.947195
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
A general analysis of transient and steady-state velocity fluctuations, diffusion and noise is presented for electrons in GaAs-AlGaAs quantum wells under high-field conditions. Electrons are confined in a square well representing the effective ID potential that arises from the band offset between GaAs and AlGaAs. The analysis of velocity fluctuations is carried out by means of the autocorrelation function, which is directly evaluated from an Ensemble Monte Carlo simulation of the 2D electron gas. In order to compare 2D results with 3D results an Ensemble Monte Carlo program for bulk GaAs has also been used with a physical model and input parameters consistent with the 2D case. From the analysis of the results and the comparison between 2D and 3D data we can study how the noise features are modified in quantum wells both in transient and stationary conditions, and what is the role of interband scattering, a new noise source not present in bulk structures. The effect of initial conditions on the transient of the system is analysed, and the weight of the different sources of noise (thermal, convective, intervalley, intersubband) on the total results is shown for the stationary case.
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Rossella Brunetti, Rossella Brunetti, } "Transient And Stationary Properties Of Velocity Fluctuations In Quantum Wells", Proc. SPIE 0942, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, (22 August 1988); doi: 10.1117/12.947195; https://doi.org/10.1117/12.947195
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