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22 October 2014 Photoelectric properties of GaAs p-n-junction under illumination of intense laser radiation
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Proceedings Volume 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8); 942102 (2014) https://doi.org/10.1117/12.2077437
Event: Eighth International Conference on Advanced Optical Materials and Devices, 2014, Riga, Latvia
Abstract
Results of experimental investigation of photoelectric properties of GaAs p-n-junction illuminated by short laser pulses of 1.06 μm wavelength are presented. The influence of laser radiation intensity and external bias voltage on the formation of photoresponse voltage has been studied. Free carrier heating was recognized to influence significantly the magnitude of the measured photovoltage. Possibility to improve the conversion efficiency of solar cells is discussed.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Ašmontas, J. Gradauskas, A. Sužiedėlis, A. Šilėnas, V. Vaičikauskas, O. Žalys, G. Steikūnas, and A. Steikūnienė "Photoelectric properties of GaAs p-n-junction under illumination of intense laser radiation", Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 942102 (22 October 2014); https://doi.org/10.1117/12.2077437
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