22 October 2014 Dynamical study of thermal conductivity of nanostructured layers by use of the photoinduced transient thermoelectric effect
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Proceedings Volume 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8); 94210C (2014) https://doi.org/10.1117/12.2083576
Event: Eighth International Conference on Advanced Optical Materials and Devices, 2014, Riga, Latvia
Abstract
We propose a new fast technique to determine thermal conductivity of a nanostructured material and demonstrate it for porous silicon. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and analysis of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we obtain the value of 35 W m-1 K-1 what is in good agreement with the results of other investigations The method can be easily applied for any other porous or otherwise structured low-dimensional materials.
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N. Samuolienė, N. Samuolienė, J. Gradauskas, J. Gradauskas, A. Sužiedėlis, A. Sužiedėlis, A. Maneikis, A. Maneikis, M. Treideris, M. Treideris, } "Dynamical study of thermal conductivity of nanostructured layers by use of the photoinduced transient thermoelectric effect ", Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 94210C (22 October 2014); doi: 10.1117/12.2083576; https://doi.org/10.1117/12.2083576
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