Proceedings Volume 9422 is from: Logo
SPIE ADVANCED LITHOGRAPHY
22-26 February 2015
San Jose, California, United States
Front Matter Vol. 9422
Proc. SPIE 9422, Front Matter: Volume 9422, 942201(22 April 2015);doi: 10.1117/12.2192263
EUV Resist Extendability: Joint Session with Conferences 9422 and 9425
Proc. SPIE 9422, Toward 10nm half-pitch in EUV lithography: results on resist screening and pattern collapse mitigation techniques, 942204(6 April 2015);doi: 10.1117/12.2085936
Proc. SPIE 9422, Extending resolution limits of EUV resist materials, 942205(19 March 2015);doi: 10.1117/12.2086276
Proc. SPIE 9422, Relationship between information and energy carried by extreme-ultraviolet photons: consideration from the viewpoint of sensitivity enhancement, 942206(13 March 2015);doi: 10.1117/12.2085619
Proc. SPIE 9422, New developments in ligand-stabilized metal oxide nanoparticle photoresists for EUV lithography, 942207(27 May 2015);doi: 10.1117/12.2086488
EUV Resist Mechanistic Studies: Joint Session with Conferences 9422 and 9425
Proc. SPIE 9422, Studying secondary electron behavior in EUV resists using experimentation and modeling, 942208(16 March 2015);doi: 10.1117/12.2086596
Proc. SPIE 9422, Analysis of shot noise limitations due to absorption count in EUV resists, 942209(16 March 2015);doi: 10.1117/12.2087303
Proc. SPIE 9422, Low-energy electron (0-100eV) interaction with resists using LEEM, 94220A(13 March 2015);doi: 10.1117/12.2085369
EUV Source
Proc. SPIE 9422, Considerations for a free-electron laser-based extreme-ultraviolet lithography program, 94220D(13 March 2015);doi: 10.1117/12.2085538
Proc. SPIE 9422, Sub-aperture EUV collector with dual-wavelength spectral purity filter, 94220E(16 March 2015);doi: 10.1117/12.2175666
Proc. SPIE 9422, High-radiance LDP source for mask-inspection application, 94220F(19 March 2015);doi: 10.1117/12.2086606
Proc. SPIE 9422, Optimum pre-pulsing and target geometry of LPP for efficient EUV and BEUV sources, 94220G(6 April 2015);doi: 10.1117/12.2085892
EUV Mask Structure
Proc. SPIE 9422, Magnetron sputtering for the production of EUV mask blanks, 94220H(6 April 2015);doi: 10.1117/12.2087773
Proc. SPIE 9422, Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks, 94220I(16 March 2015);doi: 10.1117/12.2085022
Proc. SPIE 9422, Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement, 94220J(16 March 2015);doi: 10.1117/12.2087041
Proc. SPIE 9422, Development and evaluation of interface-stabilized and reactive-sputtered oxide-capped multilayers for EUV lithography, 94220K(16 March 2015);doi: 10.1117/12.2085934
EUV Resists
Proc. SPIE 9422, Novel resist approaches to enable EUV lithography in high volume manufacturing and extensions to future nodes, 94220L(16 March 2015);doi: 10.1117/12.2086307
Proc. SPIE 9422, Understanding of stochastic noise, 94220M(7 April 2015);doi: 10.1117/12.2087559
Proc. SPIE 9422, Negative-tone imaging with EUV exposure for 14nm hp and beyond, 94220N(13 March 2015);doi: 10.1117/12.2085696
Proc. SPIE 9422, Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography, 94220O(13 March 2015);doi: 10.1117/12.2085749
Proc. SPIE 9422, Novel EUV resist development for sub-14nm half pitch, 94220P(6 April 2015);doi: 10.1117/12.2085927
Poster Session
Proc. SPIE 9422, EUV patterning improvement toward high-volume manufacturing, 94221X(19 March 2015);doi: 10.1117/12.2086080
EUV Integration
Proc. SPIE 9422, Towards production ready processing with a state-of-the-art EUV cluster, 94220R(13 March 2015);doi: 10.1117/12.2085894
Proc. SPIE 9422, EUV contact holes and pillars patterning, 94220S(16 March 2015);doi: 10.1117/12.2085920
Proc. SPIE 9422, EUV processing and characterization for BEOL, 94220T(13 March 2015);doi: 10.1117/12.2086126
Proc. SPIE 9422, Implementation of assist features in EUV lithography, 94220U(16 March 2015);doi: 10.1117/12.2085946
Proc. SPIE 9422, Optical proximity effects in 4-nm EUV lithography: a rigorous study using a new PSTD method, 94220V(16 March 2015);doi: 10.1117/12.2085943
Proc. SPIE 9422, Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?, 94220W(16 March 2015);doi: 10.1117/12.2085959
Mask Topography: Joint Session with Conferences 9422 and 9426
Proc. SPIE 9422, Best focus shift mechanism for thick masks, 94220X(16 March 2015);doi: 10.1117/12.2085948
Proc. SPIE 9422, Mitigation of image contrast loss due to mask-side non-telecentricity in an EUV scanner , 94220Y(13 March 2015);doi: 10.1117/12.2085092
Proc. SPIE 9422, EUV telecentricity and shadowing errors impact on process margins, 94220Z(16 March 2015);doi: 10.1117/12.2087639
Resist Outgas Testing
Proc. SPIE 9422, Analysis of EUV resist outgassing depended on the dosage, 942210(13 March 2015);doi: 10.1117/12.2085692
Proc. SPIE 9422, First results of outgas resist family test and correlation between outgas specifications and EUV resist development, 942211(16 March 2015);doi: 10.1117/12.2087424
Proc. SPIE 9422, Collaborative work on reducing the intersite gaps in outgassing qualification, 942212(13 March 2015);doi: 10.1117/12.2085700
Proc. SPIE 9422, Polarization resolved measurements with the new EUV ellipsometer of PTB, 942213(13 March 2015);doi: 10.1117/12.2085798
EUV Optics and Mask Metrology
Proc. SPIE 9422, Aberration estimation using EUV mask roughness, 942214(19 March 2015);doi: 10.1117/12.2087513
Proc. SPIE 9422, A method of image-based aberration metrology for EUVL tools, 942215(16 March 2015);doi: 10.1117/12.2087177
Proc. SPIE 9422, Correlation of actinic blank inspection and experimental phase defect printability on NXE3x00 EUV scanner, 942216(13 March 2015);doi: 10.1117/12.2085801
Proc. SPIE 9422, Phase measurements of EUV mask defects, 942217(16 March 2015);doi: 10.1117/12.2087195
Proc. SPIE 9422, Application of the transport of intensity equation to EUV multilayer defect analysis, 942218(16 March 2015);doi: 10.1117/12.2085468
EUV Mask Inspection
Proc. SPIE 9422, Actinic review of EUV masks: Status and recent results of the AIMS EUV system, 942219(16 March 2015);doi: 10.1117/12.2086265
Proc. SPIE 9422, New ways of looking at masks with the SHARP EUV microscope, 94221A(16 March 2015);doi: 10.1117/12.2175553
Proc. SPIE 9422, SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges, 94221B(6 April 2015);doi: 10.1117/12.2176126
Proc. SPIE 9422, Enhancing defect detection with Zernike phase contrast in EUV multilayer blank inspection, 94221C(16 March 2015);doi: 10.1117/12.2087532
Proc. SPIE 9422, Toward defect guard-banding of EUV exposures by full chip optical wafer inspection of EUV mask defect adders, 94221D(6 April 2015);doi: 10.1117/12.2085958
Proc. SPIE 9422, Application of differential phase contrast imaging to EUV mask inspection: a numerical study, 94221E(6 April 2015);doi: 10.1117/12.2085945
EUV Extension
Proc. SPIE 9422, EUV lithography scanner for sub-8nm resolution, 94221F(16 March 2015);doi: 10.1117/12.2087502
Proc. SPIE 9422, EUV lithography optics for sub-9nm resolution, 94221G(16 March 2015);doi: 10.1117/12.2175488
Proc. SPIE 9422, Imaging performance of EUV lithography optics configuration for sub-9nm resolution, 94221H(16 March 2015);doi: 10.1117/12.2175658
Proc. SPIE 9422, EUV resolution enhancement techniques (RETs) for k1 0.4 and below, 94221I(16 March 2015);doi: 10.1117/12.2086074
Proc. SPIE 9422, Extending shearing interferometry to high-NA for EUV optical testing, 94221J(19 March 2015);doi: 10.1117/12.2087568
Proc. SPIE 9422, Advanced coatings for next generation lithography, 94221K(13 March 2015);doi: 10.1117/12.2085764
EUV Manufacturing
Proc. SPIE 9422, The patterning center of excellence (CoE): an evolving lithographic enablement model, 94221L(13 March 2015);doi: 10.1117/12.2175733
Proc. SPIE 9422, EUV mask cleans comparison of frontside and dual-sided concurrent cleaning, 94221M(19 March 2015);doi: 10.1117/12.2085913