19 March 2015 Extending resolution limits of EUV resist materials
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Abstract
Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a viable candidate for next generation lithography1, which drives the need for EUV resists capable of high resolution with high sensitivity and low LWR. While chemically amplified resists (CARs) have demonstrated the ability to pattern 12nm half-pitch features2, pattern collapse continues to limit their ultimate resolution. We have taken multiple approaches to extend resist capabilities past these limits. Recent results in pattern collapse mitigation using a resist encapsulation and etch back strategy will be discussed. We continue to investigate EUV patterning of semi-inorganic resists to simultaneously increase EUV photon absorption and extend mechanical strength beyond CAR capabilities. The limitations of metal oxide-based nanoparticle photoresists have been investigated, and have provided key insights to further understanding the mechanism of this class of materials.
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Marie Krysak, Marie Krysak, Michael Leeson, Michael Leeson, Eungnak Han, Eungnak Han, James Blackwell, James Blackwell, Shane Harlson, Shane Harlson, } "Extending resolution limits of EUV resist materials", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942205 (19 March 2015); doi: 10.1117/12.2086276; https://doi.org/10.1117/12.2086276
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