16 March 2015 Analysis of shot noise limitations due to absorption count in EUV resists
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Abstract
Both fundamental measurements of resist exposure events and measurements of line-edge roughness for similar exposure latitude images for e-beam and EUV patterning tools have been used to assess the relative role of exposure shot-noise in lithographic performance. Electron energy loss spectroscopy (EELS) has been performed to quantify the probability of absorption of 100 keV electrons in two commercially available EUV resists. About 1/3 of the incident electrons lose at least 2 eV in the materials and this absorption probability is larger than that for EUV photons in the two modern EUV resists. Exposure event count densities between EUV and e-beam differ by 11-13%, which results in an expected difference in the variation in exposure shot noise of only 6%. With matched image exposure latitudes and accounting for EUV mask LER contribution the measured LER distributions indicate a high (76% and 94%) confidence that EUV resist performance is currently not dominated by exposure event counts for two leading chemically amplified EUV resists.
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Suchit Bhattarai, Suchit Bhattarai, Weilun Chao, Weilun Chao, Shaul Aloni, Shaul Aloni, Andrew R. Neureuther, Andrew R. Neureuther, Patrick P. Naulleau, Patrick P. Naulleau, } "Analysis of shot noise limitations due to absorption count in EUV resists", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942209 (16 March 2015); doi: 10.1117/12.2087303; https://doi.org/10.1117/12.2087303
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