6 April 2015 Magnetron sputtering for the production of EUV mask blanks
Author Affiliations +
Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Kearney, Patrick Kearney, Tat Ngai, Tat Ngai, Anil Karumuri, Anil Karumuri, Jung Yum, Jung Yum, Hojune Lee, Hojune Lee, David Gilmer, David Gilmer, Tuan Vo, Tuan Vo, Frank Goodwin, Frank Goodwin, "Magnetron sputtering for the production of EUV mask blanks", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220H (6 April 2015); doi: 10.1117/12.2087773; https://doi.org/10.1117/12.2087773


EUVL mask blank repair
Proceedings of SPIE (June 30 2002)
Process development of 6-in EUV mask with TaBN absorber
Proceedings of SPIE (July 31 2002)
Masks for extreme ultraviolet lithography
Proceedings of SPIE (December 17 1998)
Mask technology for EUV lithography
Proceedings of SPIE (April 22 1999)

Back to Top