16 March 2015 Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks
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Abstract
In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilayer (ML) reflective coatings with 20 bilayers, and a new thinner Ni-based absorber layer on each of these mask stacks. The use of a Ru/Si ML coating with its shallower effective reflectance plane and a 2x thinner Ni-based absorber is expected to significantly reduce both shadow bias requirements and mask telecentricity errors. The conclusions of the paper are supported with the results of both experimental measurements and rigorous simulations.
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Obert Wood, Obert Wood, Sudharshanan Raghunathan, Sudharshanan Raghunathan, Pawitter Mangat, Pawitter Mangat, Vicky Philipsen, Vicky Philipsen, Vu Luong, Vu Luong, Patrick Kearney, Patrick Kearney, Erik Verduijn, Erik Verduijn, Aditya Kumar, Aditya Kumar, Suraj Patil, Suraj Patil, Christian Laubis, Christian Laubis, Victor Soltwisch, Victor Soltwisch, Frank Scholze, Frank Scholze, } "Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220I (16 March 2015); doi: 10.1117/12.2085022; https://doi.org/10.1117/12.2085022
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