16 March 2015 Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks
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In this paper we compare the imaging performance of several options currently under consideration for use in 0.33 and higher numerical aperture (NA) extreme ultraviolet (EUV) mask stacks, Mo/Si ML reflective coatings with 40 bilayers, Ru/Si multilayer (ML) reflective coatings with 20 bilayers, and a new thinner Ni-based absorber layer on each of these mask stacks. The use of a Ru/Si ML coating with its shallower effective reflectance plane and a 2x thinner Ni-based absorber is expected to significantly reduce both shadow bias requirements and mask telecentricity errors. The conclusions of the paper are supported with the results of both experimental measurements and rigorous simulations.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Obert Wood, Sudharshanan Raghunathan, Pawitter Mangat, Vicky Philipsen, Vu Luong, Patrick Kearney, Erik Verduijn, Aditya Kumar, Suraj Patil, Christian Laubis, Victor Soltwisch, Frank Scholze, "Alternative materials for high numerical aperture extreme ultraviolet lithography mask stacks", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220I (16 March 2015); doi: 10.1117/12.2085022; https://doi.org/10.1117/12.2085022


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