13 March 2015 Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography
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Abstract
Extreme ultraviolet (EUV) lithography is the most promising candidate for the high-volume production of semiconductor devices with half-pitches of sub 10nm. An anion-bound polymer(ABP), in which at the anion part of onium salts is polymerized, has attracted much attention from the viewpoint of the control of acid diffusion. In this study, the acid generation mechanism in ABP films was investigated using γ and EUV radiolysis. On the basis of experimental results, the acid generation mechanism in anion-bound chemically amplified resists was proposed. The protons of acids are considered to be mainly generated through the reaction of phenyl radicals with diphenylsulfide radical cations that are produced through the hole transfer to the decomposition products of onium salts.
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Yoshitaka Komuro, Hiroki Yamamoto, Kazuo Kobayashi, Katsumi Ohomori, Takahiro Kozawa, "Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220O (13 March 2015); doi: 10.1117/12.2085749; https://doi.org/10.1117/12.2085749
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