6 April 2015 Novel EUV resist development for sub-14nm half pitch
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Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). In this paper, we investigated and developed new chemically amplified resist (CAR) materials to achieve sub-14 nm hp resolution. We found that both resolution and sensitivity were improved simultaneously by controlling acid diffusion length and efficiency of acid generation using novel PAG and sensitizer. EUV lithography evaluation results obtained for new CAR on Micro Exposure Tool (MET) and NXE3300 system are described and the fundamentals are discussed.
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Masafumi Hori, Masafumi Hori, Takehiko Naruoka, Takehiko Naruoka, Hisashi Nakagawa, Hisashi Nakagawa, Tomohisa Fujisawa, Tomohisa Fujisawa, Takakazu Kimoto, Takakazu Kimoto, Motohiro Shiratani, Motohiro Shiratani, Tomoki Nagai, Tomoki Nagai, Ramakrishnan Ayothi, Ramakrishnan Ayothi, Yoshi Hishiro, Yoshi Hishiro, Kenji Hoshiko, Kenji Hoshiko, Toru Kimura, Toru Kimura, "Novel EUV resist development for sub-14nm half pitch", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220P (6 April 2015); doi: 10.1117/12.2085927; https://doi.org/10.1117/12.2085927

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