16 March 2015 Optical proximity effects in 4-nm EUV lithography: a rigorous study using a new PSTD method
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Abstract
In this paper, rigorous simulation is used to explore the limits of high-NA EUV lithography for printing real circuits containing 1D and 2D patterns. First, a new, non-conforming mesh pseudo-spectral time-domain formulation suitable for simulating complicated EUV mask layouts is described. Then, an exact mathematical explanation of the waveguide effect in high-NA EUV lithography is presented. This effect serves to overcome much of the problem of shadowing in high-NA EUV lithography. Next, the printing of a DRAM circuit with 4-nm feature size using optical proximity correction and single exposure is demonstrated. Finally, the possibility of printing a SRAM circuit with 4-nm feature size using single exposure is discussed.
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Michael Yeung, Eytan Barouch, "Optical proximity effects in 4-nm EUV lithography: a rigorous study using a new PSTD method", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220V (16 March 2015); doi: 10.1117/12.2085943; https://doi.org/10.1117/12.2085943
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