16 March 2015 Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?
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Abstract
We have performed a systematic study regarding the diblock composition to keep the size of the cylinders relatively constant despite the shape of the guiding pattern. We have also explored how some guiding patterns shapes provide acceptable cylindrical assembly using an EUV exposure system. This study assumes that LER is a random phenomenon which conformably follows the shape of the guiding pattern. While the edges of the guiding pattern have fluctuations related to the LER of the EUV resist, as long as the centroid of the guiding pattern remains constant, the rectification characteristics of DSA permits adequate hole formation. In this paper we include the level of LER a guiding pattern can exhibit given a pre-determined diblock copolymer / homopolymer mixture. As the amount of homopolymer increases, the size and placement of the assembled diblock becomes less sensitive to the guiding pattern’s edge roughness. This study also explores how the addition of homopolymer is only effective up to a point, as a homopolymer-rich blend is not able to assemble properly. One of the concerns about homopolymer-rich mixtures is the effect it has in the formation of defects. Such effect has not been fully characterized but this study serves as the basis for testing optimal combinations of materials and lithography settings for an EUV system, with the end goal to enable contact/via printing at lower EUV source power requirements.
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J. Andres Torres, Fan Jiang, Yuansheng Ma, Joerg Mellman, Kafai Lai, Ananthan Raghunathan, Yongan Xu, Chi-Chun Liu, Cheng Chi, "Directed self assembly on resist-limited guiding patterns for hole grapho-epitaxy: Can DSA help lower EUV's source power requirements?", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94220W (16 March 2015); doi: 10.1117/12.2085959; https://doi.org/10.1117/12.2085959
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