13 March 2015 Collaborative work on reducing the intersite gaps in outgassing qualification
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Abstract
This paper reports on an all-out effort to reduce the intersite gap of the resist outgassing contamination growth in the results obtained under the round-robin scheme. All test sites collaborated to determine the causes of such gaps. First, it was determined that wafer temperature during exposure could impact the amount of contamination growth. We discovered a huge intersite gap of wafer temperatures among the sites by using a wafer-shaped remote thermometer with wireless transmitting capability. Second, whether the contamination-limited regime was attained during testing could have been another primary root cause for such a difference. We found that for one of the model resists whose protecting unit had lower activation energy and molecular weight the contamination-limited regime was insufficient at one test site. Third, the ratio of the exposed area to pumping speed is necessary to equalize contamination growth. We validated the effect of matching the ratio of exposure area to pumping speed on reducing the intersite gap. This study and the protocols put in place should reduce the intersite gap dramatically.
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Soichi Inoue, Eishi Shiobara, Takeshi Sasami, Isamu Takagi, Yukiko Kikuchi, Toru Fujimori, Shinya Minegishi, Robert Berg, Thomas Lucatorto, Shannon Hill, Charles Tarrio, Ivan Pollentier, Yen-Chih Lin, Yu-Jen Fan, Dominic Ashworth, "Collaborative work on reducing the intersite gaps in outgassing qualification", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942212 (13 March 2015); doi: 10.1117/12.2085700; https://doi.org/10.1117/12.2085700
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