16 March 2015 Application of the transport of intensity equation to EUV multilayer defect analysis
Author Affiliations +
This paper proposes a new method for the characterization of multilayer defects of EUV masks. The method uses measured or simulated EUV projection images at different focus positions. The Transport of Intensity Equation (TIE) is applied to retrieve the phase distribution of the reflected light in the vicinity of the defect. An Artificial Neural Network (ANN) is applied to correlate the optical properties of the intensity and recovered phase of the defect with the defect geometry parameters and to reconstruct the defect geometry parameters from though-focus-images of unknown defects.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongbo Xu, Peter Evanschitzky, Andreas Erdmann, "Application of the transport of intensity equation to EUV multilayer defect analysis", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942218 (16 March 2015); doi: 10.1117/12.2085468; https://doi.org/10.1117/12.2085468


Overview of SEMATECH's EUVL program
Proceedings of SPIE (June 16 2005)
EUV lithography program at IMEC
Proceedings of SPIE (March 13 2007)
Static EUV micro-exposures using the ETS Set-2 optics
Proceedings of SPIE (June 16 2003)
Mask readiness for EUVL pilot line
Proceedings of SPIE (April 16 2012)

Back to Top