16 March 2015 EUV lithography optics for sub-9nm resolution
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EUV lithography for resolution below 9 nm requires the numerical aperture of the projection optics to be significantly larger than 0.45. A configuration of 4x magnification, full field size and 6’’ reticle is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable shadowing effects, which can only be controlled by increasing the magnification, hence reducing the system productivity. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm². We discuss the optical solutions for anamorphic high-NA lithography.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bernhard Kneer, Bernhard Kneer, Sascha Migura, Sascha Migura, Winfried Kaiser, Winfried Kaiser, Jens Timo Neumann, Jens Timo Neumann, Jan van Schoot, Jan van Schoot, "EUV lithography optics for sub-9nm resolution", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221G (16 March 2015); doi: 10.1117/12.2175488; https://doi.org/10.1117/12.2175488


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