16 March 2015 Imaging performance of EUV lithography optics configuration for sub-9nm resolution
Author Affiliations +
Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94221H (2015); doi: 10.1117/12.2175658
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States
Abstract
New design solutions are available for high-NA EUV optics, maintaining simultaneously superior imaging performance and productivity below 9nm resolution by means of anamorphic imaging. We investigate the imaging properties of these new optics configurations by rigorous simulations, taking into account mask induced effects as well as characteristics of the new optics. We compare the imaging behavior to other, more traditional optics configurations, and show that the productivity gain of our new configurations is indeed obtained at excellent imaging performance.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura, Bernhard Kneer, Winfried Kaiser, Koen van Ingen Schenau, "Imaging performance of EUV lithography optics configuration for sub-9nm resolution", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221H (16 March 2015); doi: 10.1117/12.2175658; https://doi.org/10.1117/12.2175658
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Imaging systems

Reticles

Semiconducting wafers

Photomasks

Diffraction

Lithography

Extreme ultraviolet lithography

RELATED CONTENT

EUV lithography optics for sub-9nm resolution
Proceedings of SPIE (March 16 2015)
EUV High NA scanner and mask optimization for sub 8...
Proceedings of SPIE (November 16 2015)
EUV high NA scanner and mask optimization for sub 8nm...
Proceedings of SPIE (March 18 2016)
EUV imaging: an aerial image study
Proceedings of SPIE (May 20 2004)
SMO photomask inspection in the lithographic plane
Proceedings of SPIE (September 23 2009)

Back to Top