16 March 2015 Imaging performance of EUV lithography optics configuration for sub-9nm resolution
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New design solutions are available for high-NA EUV optics, maintaining simultaneously superior imaging performance and productivity below 9nm resolution by means of anamorphic imaging. We investigate the imaging properties of these new optics configurations by rigorous simulations, taking into account mask induced effects as well as characteristics of the new optics. We compare the imaging behavior to other, more traditional optics configurations, and show that the productivity gain of our new configurations is indeed obtained at excellent imaging performance.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Timo Neumann, Jens Timo Neumann, Matthias Rösch, Matthias Rösch, Paul Gräupner, Paul Gräupner, Sascha Migura, Sascha Migura, Bernhard Kneer, Bernhard Kneer, Winfried Kaiser, Winfried Kaiser, Koen van Ingen Schenau, Koen van Ingen Schenau, } "Imaging performance of EUV lithography optics configuration for sub-9nm resolution", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221H (16 March 2015); doi: 10.1117/12.2175658; https://doi.org/10.1117/12.2175658


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