13 March 2015 Performance overview and outlook of EUV lithography systems
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Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.
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Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Arthur W. E. Minnaert, Martijn van Noordenburg, Jörg Mallmann, Noreen Harned, Judon Stoeldraijer, Christian Wagner, Carmen Zoldesi, Eelco van Setten, Jo Finders, Koen de Peuter, Chris de Ruijter, Milos Popadic, Roger Huang, Martin Lin, Frank Chuang, Roderik van Es, Marcel Beckers, David Brandt, Nigel Farrar, Alex Schafgans, Daniel Brown, Herman Boom, Hans Meiling, Ron Kool, "Performance overview and outlook of EUV lithography systems", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221P (13 March 2015); doi: 10.1117/12.2085912; https://doi.org/10.1117/12.2085912


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