13 March 2015 Performance overview and outlook of EUV lithography systems
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Abstract
Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.
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Alberto Pirati, Alberto Pirati, Rudy Peeters, Rudy Peeters, Daniel Smith, Daniel Smith, Sjoerd Lok, Sjoerd Lok, Arthur W. E. Minnaert, Arthur W. E. Minnaert, Martijn van Noordenburg, Martijn van Noordenburg, Jörg Mallmann, Jörg Mallmann, Noreen Harned, Noreen Harned, Judon Stoeldraijer, Judon Stoeldraijer, Christian Wagner, Christian Wagner, Carmen Zoldesi, Carmen Zoldesi, Eelco van Setten, Eelco van Setten, Jo Finders, Jo Finders, Koen de Peuter, Koen de Peuter, Chris de Ruijter, Chris de Ruijter, Milos Popadic, Milos Popadic, Roger Huang, Roger Huang, Martin Lin, Martin Lin, Frank Chuang, Frank Chuang, Roderik van Es, Roderik van Es, Marcel Beckers, Marcel Beckers, David Brandt, David Brandt, Nigel Farrar, Nigel Farrar, Alex Schafgans, Alex Schafgans, Daniel Brown, Daniel Brown, Herman Boom, Herman Boom, Hans Meiling, Hans Meiling, Ron Kool, Ron Kool, } "Performance overview and outlook of EUV lithography systems", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221P (13 March 2015); doi: 10.1117/12.2085912; https://doi.org/10.1117/12.2085912
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