19 March 2015 An accurate method to determine the amount of out-of-band light in an EUV scanner
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Abstract
In this paper, we proposed a new design of the test mask to measure the amount of the out-of-band (OOB) light from an extreme-ultraviolet (EUV) light source by detuning the period of the multilayer (ML), rather than changing the material of the absorber, to suppress reflection of EUV light. The new OOB test mask also reflects essentially the same OOB light as that of the production mask at each wavelength in the whole OOB spectral range. With the help of the new OOB test mask, the contributions to the background intensity from in-band flare and OOB light can be correctly separated and an accurate optical-proximity-correction (OPC) model can be established.
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Shinn-Sheng Yu, Shinn-Sheng Yu, Yen-Cheng Lu, Yen-Cheng Lu, Chih-Tsung Shih, Chih-Tsung Shih, Chia-Chun Chung, Chia-Chun Chung, Shang-Chieh Chien, Shang-Chieh Chien, Shun-Der Wu, Shun-Der Wu, Norman Chen, Norman Chen, Shu-Hao Chang, Shu-Hao Chang, Hsiang-Yu Chou, Hsiang-Yu Chou, Jui-Ching Wu, Jui-Ching Wu, Tao-Ming Huang, Tao-Ming Huang, Jack J. H. Chen, Jack J. H. Chen, Anthony Yen, Anthony Yen, } "An accurate method to determine the amount of out-of-band light in an EUV scanner", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221T (19 March 2015); doi: 10.1117/12.2085089; https://doi.org/10.1117/12.2085089
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