Feasibility study on the impact of high-power EUV irradiation on key lithographic elements

Soichi Inoue; Shinji Mikami; Eishi Shiobara; Isamu Takagi; Hiroyuki Tanaka

doi:10.1117/12.2087301

19 March 2015 Feasibility study on the impact of high-power EUV irradiation on key lithographic elements

Soichi Inoue, Shinji Mikami, Eishi Shiobara, Isamu Takagi, Hiroyuki Tanaka

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94221W (2015) https://doi.org/10.1117/12.2087301
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

EIDEC has built a high-power EUV irradiation tool equipped with a laser-produced plasma source to investigate the effect of EUV power and pulsed irradiation on the resist outgassing and durability of the mask and pellicle elements. In this paper, we discuss the feasibility study on the impact of high-power EUV irradiation on key elements through the application of a high-power EUV irradiation tool. The equipment comprises a laser-produced plasma source similar to those used in presently available EUV scanners and relay mirrors which facilitates the EUV irradiation on the sample plane. The equipped laser-produced plasma source has lower power at the intermediate focus than those expected in future high-volume manufacturing EUV scanners. However, with fewer relay mirrors compared to these EUV scanners, sufficient EUV power density is emulated on the sample plane i.e. EUV power equivalent to what is expected in future high volume manufacturing EUV scanners can be obtained. The basic design configuration and performance of the laser-produced plasma source and the entire system are discussed. Tests for investigating the effect of EUV power density on the outgassing and durability of mask blanks have commenced, and the preliminary results are presented in this paper.

Citation Download Citation

Soichi Inoue, Shinji Mikami, Eishi Shiobara, Isamu Takagi, and Hiroyuki Tanaka "Feasibility study on the impact of high-power EUV irradiation on key lithographic elements", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221W (19 March 2015); https://doi.org/10.1117/12.2087301

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KEYWORDS

Extreme ultraviolet

Extreme ultraviolet lithography

Semiconducting wafers

Mirrors

Scanners

Photomasks

Relays

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