13 March 2015 Study of EUVL patterned mask inspection tool for half-pitch (hp) 16nm-11nm node
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EUVL patterned mask defect detection is one of the major issues to realize device fabrication with EUV lithography.1-6 We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 (“Model EBEYE” is an EBARA’s model code), and which seems to be quite promising for hp 16 nm node EUVL patterned mask inspection. The PEM system performs well for hp 16 nm EUVL patterned mask inspection. Moreover, we discuss the system extendibility to 11 nm node defect detection. High-speed image sensor, high-speed image processing circuit, and bright/stable electron source are necessary for hp 11 nm defect inspection. We describe the experimental results of the EUVL patterned mask inspection using the abovementioned system for hp 11 nm node. Programmed defects in hp 11 nm (44 nm on mask) are applied for defect detection sensitivity evaluation.
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Ryoichi Hirano, Ryoichi Hirano, Susumu Iida, Susumu Iida, Tsuyoshi Amano, Tsuyoshi Amano, Hidehiro Watanabe, Hidehiro Watanabe, Masahiro Hatakeyama, Masahiro Hatakeyama, Takeshi Murakami, Takeshi Murakami, Shoji Yoshikawa, Shoji Yoshikawa, Kenichi Karimata, Kenichi Karimata, Kenji Terao, Kenji Terao, "Study of EUVL patterned mask inspection tool for half-pitch (hp) 16nm-11nm node", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942224 (13 March 2015); doi: 10.1117/12.2085694; https://doi.org/10.1117/12.2085694

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