Modeling of bi-spectral primary source for the EUV lithography

A. P. Zhevlakov; R. P. Seisyan; V. G. Bespalov; V. V. Elizarov; A. S. Grishkanich; S. V. Kascheev

doi:10.1117/12.2086272

19 March 2015 Modeling of bi-spectral primary source for the EUV lithography

A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov, A. S. Grishkanich, S. V. Kascheev

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94222M (2015) https://doi.org/10.1117/12.2086272
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

It is shown that the power consumption in the double-pulse bi-spectral primary source for EUV lithography can be substantially decrease by replacing pre-amplifiers in power CO₂ laser with the SRS converters wavelength 1.06 μm to 10.6 μm while maintaining efficiency of EUV radiation output of illuminated plasma.

Citation Download Citation

A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov, A. S. Grishkanich, and S. V. Kascheev "Modeling of bi-spectral primary source for the EUV lithography", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222M (19 March 2015); https://doi.org/10.1117/12.2086272

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