Modeling of bi-spectral primary source for the EUV lithography

A. P. Zhevlakov; R. P. Seisyan; V. G. Bespalov; V. V. Elizarov; A. S. Grishkanich; S. V. Kascheev

doi:10.1117/12.2086272

19 March 2015 Modeling of bi-spectral primary source for the EUV lithography

A. P. Zhevlakov; R. P. Seisyan; V. G. Bespalov; V. V. Elizarov; A. S. Grishkanich; S. V. Kascheev

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94222M (2015) https://doi.org/10.1117/12.2086272
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

It is shown that the power consumption in the double-pulse bi-spectral primary source for EUV lithography can be substantially decrease by replacing pre-amplifiers in power CO₂ laser with the SRS converters wavelength 1.06 μm to 10.6 μm while maintaining efficiency of EUV radiation output of illuminated plasma.

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A. P. Zhevlakov, A. P. Zhevlakov, R. P. Seisyan, R. P. Seisyan, V. G. Bespalov, V. G. Bespalov, V. V. Elizarov, V. V. Elizarov, A. S. Grishkanich, A. S. Grishkanich, S. V. Kascheev, S. V. Kascheev, } "Modeling of bi-spectral primary source for the EUV lithography", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222M (19 March 2015); doi: 10.1117/12.2086272; https://doi.org/10.1117/12.2086272

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