13 March 2015 Key components technology update of 100W HVM EUV source
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This paper introduces key components technology update of 100 W HVM LPP-EUV (laser produced plasma extreme ultraviolet) source which enable sub-10 nm critical layer patterning. This light source system is composed of several key components and each has its innovating, key and original technology. They are perfectly controlled and work harmoniously to produce stable plasma and provide high power EUV light in long term to the photolithography equipment. This paper describes the latest results obtained from our proto systems and test stands which support one hundred watt HVM LPP-EUV light source. Key components performance with experimental data and measurements are reported, such as high power short pulse CO2 drive laser, unique pre-pulse laser technology, very small droplet generation, magnetic debris mitigation, laser-droplet shooting control and etc.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taku Yamazaki, Taku Yamazaki, Hakaru Mizoguchi, Hakaru Mizoguchi, Hiroaki Nakarai, Hiroaki Nakarai, Tamotsu Abe, Tamotsu Abe, Yasufumi Kawasuji, Yasufumi Kawasuji, Takeshi Okamoto, Takeshi Okamoto, Hiroshi Tanaka, Hiroshi Tanaka, Yukio Watanabe, Yukio Watanabe, Tsukasa Hori, Tsukasa Hori, Takeshi Kodama, Takeshi Kodama, Yutaka Shiraishi, Yutaka Shiraishi, Shinji Okazaki, Shinji Okazaki, Takashi Saitou, Takashi Saitou, } "Key components technology update of 100W HVM EUV source", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222P (13 March 2015); doi: 10.1117/12.2180269; https://doi.org/10.1117/12.2180269


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