19 March 2015 Customization and design of directed self-assembly using hybrid prepatterns
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Diminishing error tolerance renders the customization of patterns created through directed self-assembly (DSA) extremely challenging at tighter pitch. A self-aligned customization scheme can be achieved using a hybrid prepattern comprising both organic and inorganic regions that serves as a guiding prepattern to direct the self-assembly of the block copolymers as well as a cut mask pattern for the DSA arrays aligned to it. In this paper, chemoepitaxy-based self-aligned customization is demonstrated using two types of organic-inorganic prepatterns. CHEETAH prepattern for “CHemoepitaxy Etch Trim using a self-Aligned Hardmask” of preferential hydrogen silsesquioxane (HSQ, inorganic resist), non-preferential organic underlayer is fabricated using electron beam lithography. Customized trench or hole arrays can be achieved through co-transfer of DSA-formed arrays and CHEETAH prepattern. Herein, we also introduce a tone-reversed version called reverse-CHEETAH (or rCHEETAH) in which customized line segments can be achieved through co-transfer of DSA-formed arrays formed on a prepattern wherein the inorganic HSQ regions are nonpreferential and the organic regions are PMMA preferential. Examples of two-dimensional self-aligned customization including 25nm pitch fin structures and an 8-bar “IBM” illustrate the versatility of this customization scheme using rCHEETAH.
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Joy Cheng, Joy Cheng, Gregory S. Doerk, Gregory S. Doerk, Charles T. Rettner, Charles T. Rettner, Gurpreet Singh, Gurpreet Singh, Melia Tjio, Melia Tjio, Hoa Truong, Hoa Truong, Noel Arellano, Noel Arellano, Srinivasan Balakrishnan, Srinivasan Balakrishnan, Markus Brink, Markus Brink, Hsinyu Tsai, Hsinyu Tsai, Chi-Chun Liu, Chi-Chun Liu, Michael A. Guillorn, Michael A. Guillorn, Daniel P. Sanders, Daniel P. Sanders, "Customization and design of directed self-assembly using hybrid prepatterns", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942307 (19 March 2015); doi: 10.1117/12.2086973; https://doi.org/10.1117/12.2086973

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