19 March 2015 Fabrication of functional electromechanical nanowire resonators by focused ion-beam (FIB) implantation
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Abstract
By the combination of focused ion beam (FIB) local gallium implantation and selective silicon etching and diffusive boron doping it is presented a fast and flexible fabrication method that allows the creation of silicon structures of various geometries. The structures obtained by this resistless approach are electrically conductive. Free suspended mechanical resonators of different dimensions and geometries had been fabricated and measured. The resulting devices present a good electrical conductivity which is employed to characterize their high frequency mechanical response by electrical methods. Combining this method with other fabrication approaches it is feasible to fabricate singular devices adapted to specific applications.
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J. Llobet, M. Sansa, X. Borrisé, F. Pérez-Murano, M. Gerbolés, "Fabrication of functional electromechanical nanowire resonators by focused ion-beam (FIB) implantation", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94230K (19 March 2015); doi: 10.1117/12.2085818; https://doi.org/10.1117/12.2085818
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