19 March 2015 Fin formation using graphoepitaxy DSA for FinFET device fabrication
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A 27nm-pitch Graphoepitaxy directed self-assembly (DSA) process targeting fin formation for FinFET device fabrication is studied in a 300mm pilot line environment. The re-designed guiding pattern of graphoepitaxy DSA process determines not only the fine DSA structures but also the fin customization in parallel direction. Consequently, the critical issue of placement error is now resolved with the potential of reduction in lithography steps. However, challenges in subsequent pattern transfer are observed due to insufficient etch budget. The cause of the issues and process optimization are illustrated. Finally, silicon fins with 100nm depth in substrate with pre-determined customization is demonstrated.
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Chi-Chun Liu, Chi-Chun Liu, Fee Li Lie, Fee Li Lie, Vinayak Rastogi, Vinayak Rastogi, Elliott Franke, Elliott Franke, Nihar Mohanty, Nihar Mohanty, Richard Farrell, Richard Farrell, Hsinyu Tsai, Hsinyu Tsai, Kafai Lai, Kafai Lai, Melih Ozlem, Melih Ozlem, Wooyong Cho, Wooyong Cho, Sung Gon Jung, Sung Gon Jung, Jay Strane, Jay Strane, Mark Somervell, Mark Somervell, Sean Burns, Sean Burns, Nelson Felix, Nelson Felix, Michael Guillorn, Michael Guillorn, David Hetzer, David Hetzer, Akiteru Ko, Akiteru Ko, Matthew Colburn, Matthew Colburn, "Fin formation using graphoepitaxy DSA for FinFET device fabrication", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94230S (19 March 2015); doi: 10.1117/12.2086053; https://doi.org/10.1117/12.2086053

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