Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch

HsinYu Tsai; Hiroyuki Miyazoe; Joy Cheng; Markus Brink; Simon Dawes; David Klaus; James Bucchignano; Daniel Sanders; Eric Joseph; Matthew Colburn; Michael Guillorn

doi:10.1117/12.2084845

19 March 2015 Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch

HsinYu Tsai, Hiroyuki Miyazoe, Joy Cheng, Markus Brink, Simon Dawes, David Klaus, James Bucchignano, Daniel Sanders, Eric Joseph, Matthew Colburn, Michael Guillorn

Author Affiliations +

Proceedings Volume 9423, Alternative Lithographic Technologies VII; 942314 (2015) https://doi.org/10.1117/12.2084845
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

A viable pattern customization strategy is a critical to continue fin pitch scaling. Analysis shows that a self-aligned customization scheme will be required for fin pitch scaling beyond 20nm. In this paper, we explore scaling of the Tone-Inverted Grapho-Epitaxy technique with 24nm pitch PS-b-PMMA polymer to create groups of fins with self-aligned spaces in between. We discuss material selection, self-aligned customization, and etch processes to form 24-nm-pitch fins on silicon on insulator substrates. We demonstrate two-dimensional pattern customization at 24nm pitch, confirming scalability of this approach. FinFET device integration results at both 28 and 24 nm pitches shows a promising path for continued fin pitch scaling.

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HsinYu Tsai, Hiroyuki Miyazoe, Joy Cheng, Markus Brink, Simon Dawes, David Klaus, James Bucchignano, Daniel Sanders, Eric Joseph, Matthew Colburn, and Michael Guillorn "Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942314 (19 March 2015); https://doi.org/10.1117/12.2084845

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