19 March 2015 Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
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Abstract
A viable pattern customization strategy is a critical to continue fin pitch scaling. Analysis shows that a self-aligned customization scheme will be required for fin pitch scaling beyond 20nm. In this paper, we explore scaling of the Tone-Inverted Grapho-Epitaxy technique with 24nm pitch PS-b-PMMA polymer to create groups of fins with self-aligned spaces in between. We discuss material selection, self-aligned customization, and etch processes to form 24-nm-pitch fins on silicon on insulator substrates. We demonstrate two-dimensional pattern customization at 24nm pitch, confirming scalability of this approach. FinFET device integration results at both 28 and 24 nm pitches shows a promising path for continued fin pitch scaling.
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HsinYu Tsai, Hiroyuki Miyazoe, Joy Cheng, Markus Brink, Simon Dawes, David Klaus, James Bucchignano, Daniel Sanders, Eric Joseph, Matthew Colburn, Michael Guillorn, "Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942314 (19 March 2015); doi: 10.1117/12.2084845; https://doi.org/10.1117/12.2084845
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