19 March 2015 Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
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A viable pattern customization strategy is a critical to continue fin pitch scaling. Analysis shows that a self-aligned customization scheme will be required for fin pitch scaling beyond 20nm. In this paper, we explore scaling of the Tone-Inverted Grapho-Epitaxy technique with 24nm pitch PS-b-PMMA polymer to create groups of fins with self-aligned spaces in between. We discuss material selection, self-aligned customization, and etch processes to form 24-nm-pitch fins on silicon on insulator substrates. We demonstrate two-dimensional pattern customization at 24nm pitch, confirming scalability of this approach. FinFET device integration results at both 28 and 24 nm pitches shows a promising path for continued fin pitch scaling.
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HsinYu Tsai, HsinYu Tsai, Hiroyuki Miyazoe, Hiroyuki Miyazoe, Joy Cheng, Joy Cheng, Markus Brink, Markus Brink, Simon Dawes, Simon Dawes, David Klaus, David Klaus, James Bucchignano, James Bucchignano, Daniel Sanders, Daniel Sanders, Eric Joseph, Eric Joseph, Matthew Colburn, Matthew Colburn, Michael Guillorn, Michael Guillorn, "Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 942314 (19 March 2015); doi: 10.1117/12.2084845; https://doi.org/10.1117/12.2084845

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