19 March 2015 Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack
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Abstract
Maskless electron beam lithography is an attractive solution to address sub-90 nm technology nodes with high throughput and manufacturing costs reduction. One of the key challenges is to meet entirely process/integration specifications in terms of resolution, resist sensitivity, roughness and etch transfer into underlayers. In this paper, we evaluate and identify the optimal stack to fit printing performance using e-beam exposures and etch transfer patterning. Besides imaging performance, other key parameters such as outgassing and charge dissipation due to high current density are also considered to fully achieve targets for the machine developed by MAPPER Lithography.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isabelle Servin, Isabelle Servin, Ndeye Arame Thiam, Ndeye Arame Thiam, Patricia Pimenta-Barros, Patricia Pimenta-Barros, Marie-Line Pourteau, Marie-Line Pourteau, Armel-Petit Mebiene, Armel-Petit Mebiene, Julien Jussot, Julien Jussot, Jonathan Pradelles, Jonathan Pradelles, Philippe Essomba, Philippe Essomba, Ludovic Lattard, Ludovic Lattard, Pieter Brandt, Pieter Brandt, Marco Wieland, Marco Wieland, } "Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94231C (19 March 2015); doi: 10.1117/12.2085915; https://doi.org/10.1117/12.2085915
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