Paper
19 March 2015 Application of frequency domain line edge roughness characterization methodology in lithography
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Abstract
A frequency domain 3 sigma LER characterization methodology combining the standard deviation and power spectral density (PSD) methods is proposed. In the new method, the standard deviation is calculated in the frequency domain instead of the spatial domain as in the conventional method. The power spectrum of the LER is divided into three regions: low frequency (LF), middle frequency (MF) and high frequency (HF) regions. The frequency region definition is based on process visual comparisons. Three standard deviation numbers are used to characterize the LER in the three frequency regions. Pattern wiggling can be detected quantitatively with a wiggling factor which is also proposed in this paper.
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Lei Sun, Wenhui Wang, Genevieve Beique, Obert Wood II, and Ryoung-Han Kim "Application of frequency domain line edge roughness characterization methodology in lithography", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942404 (19 March 2015); https://doi.org/10.1117/12.2086961
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Cited by 5 scholarly publications.
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KEYWORDS
Line edge roughness

Line width roughness

Etching

Visualization

Lithography

Semiconductors

Neodymium

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