19 March 2015 Line profile measurement of advanced-FinFET features by reference metrology
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A novel method of sub-nanometer uncertainty for the line profile measurement using TEM (Transmission Electron Microscope) images is proposed to calibrate CD-SEM (Critical Dimension Scanning Electron Microscope) line width measurement and to standardize line profile measurement through reference metrology. The proposed method has been validated for profile of Si line and photoresist features in our previous investigations. In this article, we apply the methodology to line profile measurements of advanced-FinFET (Fin-shaped Field-Effect Transistor) features. The FinFET features are sliced as thin specimens of 100 nm thickness by FIB (Focused Ion Beam) micro sampling system. Cross-sectional images of the specimens are obtained then by TEM. The profiles of fin, hardmask and dummy gate of FinFET features are evaluated using TEM images. The width of fin, the length of hardmask, and the length of dummy gate of FinFET features are measured and compared to CD-SEM measurement. The TEM results will be used to implement CD-SEM and CD-AFM reference metrology.
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Kiyoshi Takamasu, Kiyoshi Takamasu, Yuuki Iwaki, Yuuki Iwaki, Satoru Takahashi, Satoru Takahashi, Hiroki Kawada, Hiroki Kawada, Masami Ikota, Masami Ikota, Atsuko Yamaguchi, Atsuko Yamaguchi, Gian F. Lorusso, Gian F. Lorusso, Naoto Horiguchi, Naoto Horiguchi, "Line profile measurement of advanced-FinFET features by reference metrology", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942406 (19 March 2015); doi: 10.1117/12.2087099; https://doi.org/10.1117/12.2087099


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