We were able to change the spatial orientation of Silicon nanowires by modifying scanning conditions which effectively controls the amount of charging induced by the SEM. Strong charging, which corresponds to high dose leads to change of silicon wires spatial orientation, they appear straight in SEM top view and tilt image planes. Reducing charging by the means of scan rate increase or lower number of scanned frames saves the silicon wires buckled in their natural state.
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Shimon Levi, Konstantin Chirko, Ofer Adan, Guy Cohen, Sarunya Bangsaruntip, Leathen Shi, Alfred Grill, Deborah Neumayer, "Induced e-beam charge impact on spatial orientation of gate-all-around silicon wires device fabricated on boron nitride substrate," Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942407 (10 April 2015);