19 March 2015 Influence of the process-induced asymmetry on the accuracy of overlay measurements
Author Affiliations +
In the current paper we are addressing three questions relevant for accuracy: 1. Which target design has the best performance and depicts the behavior of the actual device? 2. Which metrology signal characteristics could help to distinguish between the target asymmetry related overlay shift and the real process related shift? 3. How does uncompensated asymmetry of the reference layer target, generated during after-litho processes, affect the propagation of overlay error through different layers? We are presenting the correlation between simulation data based on the optical properties of the measured stack and KLA-Tencor’s Archer overlay measurements on a 28nm product through several critical layers for those accuracy aspects.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetyana Shapoval, Tetyana Shapoval, Bernd Schulz, Bernd Schulz, Tal Itzkovich, Tal Itzkovich, Sean Durran, Sean Durran, Ronny Haupt, Ronny Haupt, Agostino Cangiano, Agostino Cangiano, Barak Bringoltz, Barak Bringoltz, Matthias Ruhm, Matthias Ruhm, Eric Cotte, Eric Cotte, Rolf Seltmann, Rolf Seltmann, Tino Hertzsch, Tino Hertzsch, Eitan Hajaj, Eitan Hajaj, Carsten Hartig, Carsten Hartig, Boris Efraty, Boris Efraty, Daniel Fischer, Daniel Fischer, "Influence of the process-induced asymmetry on the accuracy of overlay measurements", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94240B (19 March 2015); doi: 10.1117/12.2085788; https://doi.org/10.1117/12.2085788

Back to Top