19 March 2015 Simulating massively parallel electron beam inspection for sub-20 nm defects
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Proceedings Volume 9424, Metrology, Inspection, and Process Control for Microlithography XXIX; 94240J (2015); doi: 10.1117/12.2175573
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States
Abstract
SEMATECH has initiated a program to develop massively-parallel electron beam defect inspection (MPEBI). Here we use JMONSEL simulations to generate expected imaging responses of chosen test cases of patterns and defects with ability to vary parameters for beam energy, spot size, pixel size, and/or defect material and form factor. The patterns are representative of the design rules for an aggressively-scaled FinFET-type design. With these simulated images and resulting shot noise, a signal-to-noise framework is developed, which relates to defect detection probabilities. Additionally, with this infrastructure the effect of detection chain noise and frequency dependent system response can be made, allowing for targeting of best recipe parameters for MPEBI validation experiments, ultimately leading to insights into how such parameters will impact MPEBI tool design, including necessary doses for defect detection and estimations of scanning speeds for achieving high throughput for HVM.
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Benjamin D. Bunday, Maseeh Mukhtar, Kathy Quoi, Brad Thiel, Matt Malloy, "Simulating massively parallel electron beam inspection for sub-20 nm defects", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94240J (19 March 2015); doi: 10.1117/12.2175573; http://dx.doi.org/10.1117/12.2175573
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KEYWORDS
Signal to noise ratio

Silicon

Image processing

Defect inspection

Sensors

Computer simulations

Defect detection

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