19 March 2015 Improving full-wafer on-product overlay using computationally designed process-robust and device-like metrology targets
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Abstract
In order to handle the upcoming 1x DRAM overlay and yield requirements, metrology needs to evolve to more accurately represent product device patterns while being robust to process effects. One way to address this is to optimize the metrology target design. A viable solution needs to address multiple challenges. The target needs to be resistant to process damage. A single target needs to measure overlay between two or more layers. Targets need to meet design rule and depth of focus requirements under extreme illumination conditions. These must be achieved while maintaining good precision and throughput with an ultra-small target. In this publication, a holistic approach is used to address these challenges, using computationally optimized metrology targets with an advanced overlay control loop.
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Young-Sik Kim, Young-Sun Hwang, Mi-Rim Jung, Ji-Hwan Yoo, Won-Taik Kwon, Kevin Ryan, Paul Tuffy, Youping Zhang, Sean Park, Nang-Lyeom Oh, Chris Park, Mir Shahrjerdy, Roy Werkman, Kyu-Tae Sun, Jin-Moo Byun, "Improving full-wafer on-product overlay using computationally designed process-robust and device-like metrology targets", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 942414 (19 March 2015); doi: 10.1117/12.2085645; https://doi.org/10.1117/12.2085645
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