19 March 2015 A new paradigm for in-line detection and control of patterning defects
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With continuously shrinking design rules and corresponding low-k1 lithography, defectivity and yield are increasingly dominated by systematic patterning defects. The size of these yield-limiting defects is shrinking along with feature size, making their detection and verification more difficult. We discuss a novel, holistic approach to pattern defect detection and control, which integrates full chip layout analysis and hybrid wafer metrology data to predict wafer locations with highest probability for defect occurrence. We assess the various components of this flow by an experimental study on a 10 nm BEOL process at IMEC, using state-of-the-art negative tone development (NTD) and triple Litho-Etch patterning process.
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Stefan Hunsche, Stefan Hunsche, Marinus Jochemsen, Marinus Jochemsen, Vivek Jain, Vivek Jain, Xinjian Zhou, Xinjian Zhou, Frank Chen, Frank Chen, Venu Vellanki, Venu Vellanki, Chris Spence, Chris Spence, Sandip Halder, Sandip Halder, Dieter van den Heuvel, Dieter van den Heuvel, Vincent Truffert, Vincent Truffert, "A new paradigm for in-line detection and control of patterning defects", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241B (19 March 2015); doi: 10.1117/12.2087178; https://doi.org/10.1117/12.2087178

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